Properties of Mixed Atoms in Binary Semiconductors

Turaev Ergash  Yuldoshevich; Eshmukhammadova Gulsunoi Khurram  kizz

doi:10.51699/ijise.v1i6.722

Properties of Mixed Atoms in Binary Semiconductors

Authors

Turaev Ergash Yuldoshevich Professor of Termiz State University
Eshmukhammadova Gulsunoi Khurram kizz 2nd year master of Termiz State University

DOI:

https://doi.org/10.51699/ijise.v1i6.722

Keywords:

energetic state, resonance, gamma, semiconductor, compound, atoms, surface

Abstract

The state of impurity atoms introduced into semiconductor materials determines the type of conductivity and the leaching of impurity atoms in the surface layer or inside the material was analyzed using the nuclear gamma resonance method.

Downloads

View Article

Published

2022-12-20

How to Cite

Yuldoshevich, T. E. ., & kizz, E. G. K. . (2022). Properties of Mixed Atoms in Binary Semiconductors. International Journal of Inclusive and Sustainable Education, 1(6), 116–118. https://doi.org/10.51699/ijise.v1i6.722